Advertisements

Archive

Archive for the ‘BJT’ Category

Basic Theory of BJT

April 15, 2013 Leave a comment

Learn how to derive VEB from the beginning.

Continue reading

Advertisements
Categories: 4.DEVICES, BJT

BJT – 3

March 14, 2013 Leave a comment
Chapter goal
•Explore the  physical structure of bipolar transistor
•Study terminal characteristics of BJT.
•Explore differences between npn and pnp transistors.
•Develop the Transport Model for bipolar devices.
•Define four operation regions of the BJT.
•Explore model simplifications for the forward active region.
•Understand the origin and modeling of the Early effect.
•Present a PSPICE model for the bipolar transistor. Discuss bipolar current sources and the current mirror.

Continue reading

Categories: 4.DEVICES, BJT

BJT – 2

March 14, 2013 Leave a comment
Transistors
  • Two main categories of transistors:
                          1.bipolar junction transistors (BJTs) and
                          2.field effect transistors (FETs).
  • Transistors have 3 terminals where the application of current (BJT) or voltage (FET) to the input terminal increases the amount of charge in the active region.
  • The physics of “transistor action” is quite different for the BJT and FET.
  • In analog circuits, transistors are used in amplifiers and linear regulated power supplies.
  • In digital circuits they function as electrical switches, including logic gates, random access memory (RAM), and microprocessors.

Continue reading

Categories: 4.DEVICES, BJT

Bipolar Junction Transistor (BJT)

June 2, 2010 Leave a comment
Introduction
•The basic of electronic system nowadays is semiconductor device.
•The famous and commonly use of this device is BJTs (Bipolar Junction Transistors).
• It can be use as amplifier and logic switches.
• BJT consists of  three terminal:
  1. collector : C
  2. base  : B
  3. emitter : E
• Two types of BJT : pnp and npn

Continue reading

Categories: 4.DEVICES, BJT