The EKV MOSFET Model for Circuit Simulation

• the EKV MOSFET model structure
• modelled effects and parameters
• parameter extraction and results
• model benchmarks and comparisons
• outlook on future developments

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MOSFET DC Models

MOSFET Device models used by SPICE (Simulation Program for Integrated Circuit Engineering) simulators can be divided into three classes: First Generation Models (Level 1, Level 2, Level 3 Models), Second Generation Models (BISM, HSPICE Level 28, BSIM2) and Third Generation Models (BSIM3, etc.)…

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MOS Device Characterization

In this experiment, you will find the device parameters for an n-channel MOSFET. From the parameters, you will reproduce its I-V characteristics and compare them to SPICE. The characteristics will be compared to the SPICE level 1 model…

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