Springer
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Antenna Effect
Antenna problems have existed in the chip manufacturing industry for more than one decade. In this paper,we present a systematic way to fix these problems.
Trigonometric identities
Trigonometric identities
The EKV MOSFET Model for Circuit Simulation
- the EKV MOSFET model structure
- modelled effects and parameters
- parameter extraction and results
- model benchmarks and comparisons
- outlook on future developments
MOSFET DC Models
MOSFET Device models used by SPICE (Simulation Program for Integrated Circuit Engineering) simulators can be divided into three classes: First Generation Models (Level 1, Level 2, Level 3 Models), Second Generation Models (BISM, HSPICE Level 28, BSIM2) and Third Generation Models (BSIM3, etc.)…
MOS Device Characterization
In this experiment, you will find the device parameters for an n-channel MOSFET. From the parameters, you will reproduce its I-V characteristics and compare them to SPICE. The characteristics will be compared to the SPICE level 1 model…
AnalogLib Components
Both RFIC Dynamic Link and RF Design Environment come with a modified version of Cadence’s analogLib. This manual describes the components in analogLib that are supported by RFIC Dynamic Link and RF Design Environment …
Layout of Analog CMOS – part 3
Learn about passive components – resistor and capacitor
Layout of Analog CMOS – Part 2
Learn about basic cell layout .